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IRF7316TR from IR,International Rectifier

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IRF7316TR

Manufacturer: IR

-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7316TR IR 3180 In Stock

Description and Introduction

-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package The IRF7316TR is a dual N-channel and P-channel HEXFET power MOSFET manufactured by Infineon Technologies. Here are its key specifications, descriptions, and features:

### **Manufacturer:**  
Infineon Technologies  

### **IRF7316TR Specifications:**  
- **Configuration:** Dual N-Channel and P-Channel MOSFET  
- **Drain-Source Voltage (VDS):**  
  - N-Channel: 55V  
  - P-Channel: -55V  
- **Continuous Drain Current (ID):**  
  - N-Channel: 3.7A  
  - P-Channel: -3.4A  
- **Power Dissipation (PD):** 2W (per MOSFET)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):**  
  - N-Channel: 0.055Ω (VGS = 10V)  
  - P-Channel: 0.11Ω (VGS = -10V)  
- **Input Capacitance (Ciss):**  
  - N-Channel: 300pF  
  - P-Channel: 400pF  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** SOIC-8  

### **Descriptions:**  
- Designed for high-efficiency power switching applications.  
- Suitable for synchronous rectification in DC-DC converters.  
- Low gate charge for fast switching performance.  

### **Features:**  
- **Dual MOSFET:** Combines N-Channel and P-Channel in one package.  
- **Low RDS(on):** Enhances efficiency in power conversion.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Avalanche Rated:** Robust performance under transient conditions.  
- **Lead-Free & RoHS Compliant:** Environmentally friendly.  

This information is based solely on the manufacturer's datasheet.

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