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IRF7319TRPBF from IR,International Rectifier

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15.625ms

IRF7319TRPBF

Manufacturer: IR

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7319TRPBF IR 18201 In Stock

Description and Introduction

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package The IRF7319TRPBF is a dual N-channel and P-channel MOSFET manufactured by Infineon Technologies.  

### **Specifications:**  
- **Drain-Source Voltage (VDS):**  
  - N-Channel: 30V  
  - P-Channel: -30V  
- **Continuous Drain Current (ID):**  
  - N-Channel: 5.3A  
  - P-Channel: -4.3A  
- **Power Dissipation (PD):** 2W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):**  
  - N-Channel: 50mΩ (at VGS = 10V)  
  - P-Channel: 100mΩ (at VGS = -10V)  
- **Threshold Voltage (VGS(th)):**  
  - N-Channel: 1V (min), 2V (max)  
  - P-Channel: -1V (min), -2V (max)  
- **Package:** SOIC-8  

### **Descriptions and Features:**  
- **Dual MOSFET:** Contains one N-channel and one P-channel MOSFET in a single package.  
- **Logic-Level Gate Drive:** Compatible with low-voltage control signals.  
- **Fast Switching Speed:** Optimized for high-efficiency power applications.  
- **Low On-Resistance:** Enhances power efficiency and reduces heat dissipation.  
- **Applications:** Used in power management, DC-DC converters, motor control, and battery-powered systems.  

This information is sourced from the manufacturer's datasheet.

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