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IRF7326D2 from IR,International Rectifier

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IRF7326D2

Manufacturer: IR

-30V FETKY

Partnumber Manufacturer Quantity Availability
IRF7326D2 IR 75245 In Stock

Description and Introduction

-30V FETKY The IRF7326D2 is a dual N-channel and P-channel HEXFET power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Key Specifications:**  
- **Configuration:** Dual N-Channel and P-Channel  
- **Technology:** HEXFET Power MOSFET  
- **Drain-Source Voltage (VDSS):**  
  - N-Channel: 55V  
  - P-Channel: -55V  
- **Continuous Drain Current (ID):**  
  - N-Channel: 5.5A  
  - P-Channel: -4.5A  
- **Power Dissipation (PD):** 2.5W (per MOSFET)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):**  
  - N-Channel: 0.065Ω (max) @ VGS = 10V  
  - P-Channel: 0.12Ω (max) @ VGS = -10V  
- **Package:** SOIC-8  

### **Features:**  
- **Dual MOSFET Design:** Combines N-Channel and P-Channel in a single package.  
- **Low On-Resistance:** Enhances efficiency in power switching applications.  
- **Fast Switching Speed:** Optimized for high-frequency applications.  
- **Avalanche Energy Rated:** Provides ruggedness in inductive load handling.  
- **Logic-Level Gate Drive:** Compatible with standard logic-level signals.  

### **Applications:**  
- DC-DC Converters  
- Motor Control Circuits  
- Power Management Systems  
- Switching Power Supplies  

This information is based solely on the manufacturer's datasheet and technical documentation.

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