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IRF7805A from IR,International Rectifier

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IRF7805A

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7805A IR 49 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF7805A is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
- **Infineon Technologies**  

### **IR Specifications:**  
- **Drain-Source Voltage (VDS):** 55V  
- **Continuous Drain Current (ID):** 16A  
- **Pulsed Drain Current (IDM):** 64A  
- **Power Dissipation (PD):** 45W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.015Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 1500pF  
- **Output Capacitance (Coss):** 500pF  
- **Reverse Transfer Capacitance (Crss):** 100pF  

### **Descriptions:**  
- The IRF7805A is an N-channel MOSFET designed for high-efficiency power switching applications.  
- It features low on-resistance and fast switching performance.  
- The device is optimized for use in DC-DC converters, motor control, and power management circuits.  

### **Features:**  
- **Advanced Process Technology** for low RDS(on)  
- **Fast Switching Speed**  
- **High Current Handling Capability**  
- **Avalanche Energy Specified**  
- **Lead-Free & RoHS Compliant**  
- **TO-220AB Package**  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Partnumber Manufacturer Quantity Availability
IRF7805A IOR 97 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF7805A is a power MOSFET manufactured by Infineon Technologies. Here are the factual details from Ic-phoenix technical data files:  

### **Manufacturer:**  
- **Infineon Technologies**  

### **Specifications (IOR - Input/Output Related):**  
- **Drain-Source Voltage (VDS):** 55V  
- **Continuous Drain Current (ID):** 85A  
- **Pulsed Drain Current (IDM):** 340A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 5.3mΩ (max) at VGS = 10V  
- **Power Dissipation (PD):** 200W  

### **Descriptions and Features:**  
- **Technology:** Advanced HEXFET® Power MOSFET  
- **Package:** TO-220AB (Through-Hole Mount)  
- **Low On-Resistance:** Optimized for high-efficiency power switching  
- **Fast Switching:** Suitable for high-frequency applications  
- **Avalanche Energy Rated:** Enhanced ruggedness for reliability  
- **Applications:** Used in power supplies, motor control, DC-DC converters, and other high-current switching circuits.  

These details are based solely on the provided knowledge base. No additional interpretations or suggestions are included.

Application Scenarios & Design Considerations

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

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