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IRF7821TRPBF. from IR,International Rectifier

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IRF7821TRPBF.

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7821TRPBF.,IRF7821TRPBF IR 8200 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF7821TRPBF is a power MOSFET manufactured by Infineon Technologies. Below are the specifications, descriptions, and features from the manufacturer's datasheet:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Type:** N-Channel MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):**  
  - 3.7mΩ (at VGS = 10V)  
  - 4.5mΩ (at VGS = 4.5V)  
- **Power Dissipation (PD):** 79W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** PQFN 5x6mm  

### **Descriptions:**  
The IRF7821TRPBF is a high-performance N-Channel MOSFET designed for low-voltage, high-efficiency power switching applications. It features low on-resistance and high current handling capability, making it suitable for synchronous rectification in DC-DC converters, motor control, and power management systems.  

### **Features:**  
- **Low RDS(on):** Enhances efficiency in power conversion.  
- **High Current Capability:** Supports high load currents.  
- **Fast Switching Speed:** Optimized for high-frequency applications.  
- **PQFN Package:** Provides improved thermal performance and space-saving design.  
- **Avalanche Rated:** Ensures robustness in demanding conditions.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is based on the manufacturer's datasheet for the IRF7821TRPBF.

Application Scenarios & Design Considerations

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

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