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IRF7836 from IR,International Rectifier

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IRF7836

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7836 IR 295 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package The IRF7836 is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRF7836  

### **Description:**  
The IRF7836 is a N-channel HEXFET® power MOSFET designed for high-efficiency power management applications. It is optimized for low on-resistance (RDS(on)) and fast switching performance.  

### **Key Features:**  
- **Voltage Rating (VDSS):** 30V  
- **Continuous Drain Current (ID):** 140A (at 25°C)  
- **Pulsed Drain Current (IDM):** 560A  
- **On-Resistance (RDS(on)):**  
  - 1.8mΩ (max) at VGS = 10V  
  - 2.3mΩ (max) at VGS = 4.5V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Package:** PQFN 5x6mm (DirectFET®)  
- **Low Gate Charge (QG):** 110nC (typical)  
- **Low Reverse Recovery Charge (Qrr):** 70nC (typical)  
- **Fast Switching Speed**  
- **Avalanche Energy Rated**  
- **RoHS Compliant**  

### **Applications:**  
- Synchronous buck converters  
- High-current DC-DC converters  
- Motor control  
- Power supplies  
- Battery management systems  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package

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