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IRF8513 from IR,International Rectifier

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IRF8513

Manufacturer: IR

30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF8513 IR 4700 In Stock

Description and Introduction

30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package The IRF8513 is a Power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
- International Rectifier (IR)  

### **Description:**  
- The IRF8513 is an N-channel Power MOSFET designed for high-efficiency switching applications.  

### **Key Features:**  
- **Voltage Rating (VDSS):** 30V  
- **Current Rating (ID):** 80A (continuous at 25°C)  
- **RDS(on) (Max):** 3.3 mΩ (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Fast Switching Speed**  
- **Low On-Resistance**  
- **Avalanche Energy Rated**  
- **TO-220AB Package**  

### **Applications:**  
- DC-DC Converters  
- Motor Control  
- Power Management  
- High-Current Switching Circuits  

This information is based on the manufacturer's datasheet. For detailed specifications, refer to the official IR documentation.

Application Scenarios & Design Considerations

30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

Alternative Part Number

  • BSC0902NSI --: Infineon's successor to IR parts; same 30V N-channel MOSFET class with low RDS(on) in a similar power package, direct functional replacement.
  • CSD17578Q5A --: 30V N-channel NexFET with comparable on-resistance and current rating in a 5x6 SON package, suitable drop-in for synchronous buck applications.
  • NVMFS5C410NL --: 30V logic-level N-channel MOSFET with similar RDS(on) and thermal performance in a 5x6 flat-lead package, good alternative for power switching.

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