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IRFP064V from IR,International Rectifier

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IRFP064V

Manufacturer: IR

60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package

Partnumber Manufacturer Quantity Availability
IRFP064V IR 2 In Stock

Description and Introduction

60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package The IRFP064V is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
- International Rectifier (IR)  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 110A (at 25°C)  
- **Pulsed Drain Current (IDM):** 440A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 300W (at 25°C)  
- **On-Resistance (RDS(on)):** 7.0mΩ (max at VGS = 10V)  
- **Input Capacitance (Ciss):** 5400pF (typical)  
- **Output Capacitance (Coss):** 1500pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 300pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Rise Time (tr):** 60ns (typical)  
- **Turn-Off Delay Time (td(off)):** 70ns (typical)  
- **Fall Time (tf):** 30ns (typical)  

### **Description:**  
- The IRFP064V is an N-channel power MOSFET designed for high-current, high-efficiency switching applications.  
- It features a low on-resistance and fast switching characteristics, making it suitable for power supplies, motor control, and DC-DC converters.  

### **Features:**  
- **Advanced HEXFET® Technology** for low conduction losses.  
- **Avalanche Energy Specified** for ruggedness in inductive load applications.  
- **Low Gate Charge** for improved switching performance.  
- **Fully Characterized for Dynamic dV/dt Rating** to ensure reliability in high-speed switching.  
- **Lead-Free & RoHS Compliant**  

### **Package:**  
- TO-247AC (3-pin through-hole package)  

This information is based solely on the manufacturer's datasheet and technical documentation.

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