500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package **Manufacturer:** International Rectifier (IR)
**Part Number:** IRFP23N50L
### **Specifications:**
- **Transistor Type:** N-Channel MOSFET
- **Drain-Source Voltage (VDSS):** 500V
- **Continuous Drain Current (ID):** 23A
- **Pulsed Drain Current (IDM):** 92A
- **Power Dissipation (PD):** 330W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.23Ω (max) at VGS = 10V
- **Total Gate Charge (Qg):** 90nC (typ)
- **Input Capacitance (Ciss):** 3000pF (typ)
- **Output Capacitance (Coss):** 450pF (typ)
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)
- **Turn-On Delay Time (td(on)):** 20ns (typ)
- **Turn-Off Delay Time (td(off)):** 100ns (typ)
- **Operating Junction Temperature (TJ):** -55°C to +150°C
- **Package:** TO-247AC
### **Descriptions:**
The IRFP23N50L is a high-voltage N-Channel MOSFET designed for high-efficiency power switching applications. It features low on-resistance and fast switching performance, making it suitable for power supplies, motor control, and inverters.
### **Features:**
- Low gate charge for improved switching efficiency
- High dv/dt capability
- Avalanche energy specified
- Improved body diode characteristics
- Lead-free and RoHS compliant
