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IRFP4227PBF from IR,International Rectifier

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IRFP4227PBF

Manufacturer: IR

Plasma Display Panel Switch 200V Discrete HEXFET Power MOSFET in a Lead-Free TO-247AC Package.

Partnumber Manufacturer Quantity Availability
IRFP4227PBF IR 130 In Stock

Description and Introduction

Plasma Display Panel Switch 200V Discrete HEXFET Power MOSFET in a Lead-Free TO-247AC Package. The IRFP4227PBF is a Power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 200V  
- **Continuous Drain Current (ID):** 78A (at 25°C)  
- **Pulsed Drain Current (IDM):** 310A  
- **Power Dissipation (PD):** 330W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 8.5mΩ (max at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2V (min), 4V (max)  
- **Input Capacitance (Ciss):** 4800pF  
- **Output Capacitance (Coss):** 1200pF  
- **Reverse Transfer Capacitance (Crss):** 250pF  
- **Turn-On Delay Time (td(on)):** 12ns  
- **Turn-Off Delay Time (td(off)):** 35ns  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** TO-247AC  

### **Description:**  
The IRFP4227PBF is a high-performance N-Channel MOSFET designed for power applications requiring low on-resistance and high current handling. It is optimized for switching applications in power supplies, motor control, and DC-DC converters.  

### **Features:**  
- Low on-resistance for reduced conduction losses  
- High current capability  
- Fast switching performance  
- Robust and reliable design  
- Suitable for high-power applications  
- TO-247AC package for efficient thermal dissipation  

This information is strictly based on the manufacturer's datasheet.

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