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IRFPC50PBF from VISHAY

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IRFPC50PBF

Manufacturer: VISHAY

600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package

Partnumber Manufacturer Quantity Availability
IRFPC50PBF VISHAY 12000 In Stock

Description and Introduction

600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package The IRFPC50PBF is a power MOSFET manufactured by Vishay. Below are its specifications, descriptions, and features based on factual information:  

### **Specifications:**  
- **Manufacturer:** Vishay  
- **Part Number:** IRFPC50PBF  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 6.7A (at 25°C)  
- **Pulsed Drain Current (IDM):** 27A  
- **Power Dissipation (PD):** 150W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 1.2Ω (max) at VGS = 10V  
- **Input Capacitance (Ciss):** 500pF (typical)  
- **Output Capacitance (Coss):** 100pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Rise Time (tr):** 60ns (typical)  
- **Turn-Off Delay Time (td(off)):** 70ns (typical)  
- **Fall Time (tf):** 25ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** TO-247AC  

### **Descriptions:**  
The IRFPC50PBF is a high-voltage N-channel MOSFET designed for power switching applications. It offers low on-resistance and fast switching speeds, making it suitable for high-efficiency power conversion circuits, motor control, and industrial applications.  

### **Features:**  
- **High Voltage Capability:** 600V VDSS  
- **Low On-Resistance:** 1.2Ω (max) at 10V gate drive  
- **Fast Switching:** Optimized for high-speed performance  
- **Avalanche Energy Rated:** Enhanced ruggedness  
- **TO-247AC Package:** Provides efficient thermal dissipation  
- **Low Gate Charge:** Reduces switching losses  
- **Pb-Free & RoHS Compliant**  

This information is strictly based on the manufacturer's datasheet and specifications.

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