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IRFR9110TRL from IR,International Rectifier

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IRFR9110TRL

Manufacturer: IR

-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRFR9110TRL IR 6000 In Stock

Description and Introduction

-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package The IRFR9110TRL is a Power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Specifications:**  
- **Type:** P-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** -100V  
- **Continuous Drain Current (ID):** -11A  
- **Pulsed Drain Current (IDM):** -44A  
- **Power Dissipation (PD):** 50W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):**  
  - 0.6Ω (max) at VGS = -10V  
  - 0.4Ω (max) at VGS = -20V  
- **Threshold Voltage (VGS(th)):** -2V to -4V  
- **Input Capacitance (Ciss):** 450pF  
- **Output Capacitance (Coss):** 80pF  
- **Reverse Transfer Capacitance (Crss):** 30pF  
- **Turn-On Delay Time (td(on)):** 13ns  
- **Turn-Off Delay Time (td(off)):** 40ns  
- **Rise Time (tr):** 35ns  
- **Fall Time (tf):** 20ns  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions:**  
- The IRFR9110TRL is a high-performance P-Channel MOSFET designed for power switching applications.  
- It features low on-resistance and fast switching speeds, making it suitable for efficient power management.  

### **Features:**  
- **Low On-Resistance:** Enhances efficiency in power applications.  
- **Fast Switching:** Optimized for high-frequency operation.  
- **Avalanche Energy Specified:** Ensures robustness in inductive load conditions.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  
- **Surface-Mount Package (DPAK):** Suitable for automated assembly.  

This information is based solely on the manufacturer's datasheet and technical documentation.

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