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IRFS11N50A from IR,International Rectifier

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15.625ms

IRFS11N50A

Manufacturer: IR

500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRFS11N50A IR 695 In Stock

Description and Introduction

500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRFS11N50A is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Specifications:**  
- **Voltage Rating (VDSS):** 500V  
- **Current Rating (ID):** 11A  
- **Power Dissipation (PD):** 150W  
- **Gate-to-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.45Ω (typical)  
- **Input Capacitance (Ciss):** 1300pF (typical)  
- **Output Capacitance (Coss):** 300pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Turn-Off Delay Time (td(off)):** 60ns (typical)  
- **Rise Time (tr):** 35ns (typical)  
- **Fall Time (tf):** 25ns (typical)  

### **Description:**  
- The IRFS11N50A is an N-channel power MOSFET designed for high-voltage, high-speed switching applications.  
- It is optimized for efficiency in power supplies, motor control, and other high-performance switching circuits.  

### **Features:**  
- **Fast Switching:** Designed for high-speed operation.  
- **Low On-Resistance:** Minimizes conduction losses.  
- **High Voltage Capability:** Suitable for 500V applications.  
- **Avalanche Energy Rated:** Robust against transient voltage spikes.  
- **TO-220 Package:** Provides good thermal performance.  

This information is based solely on the manufacturer's datasheet and specifications.

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