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IRFS3307Z from IR,International Rectifier

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IRFS3307Z

Manufacturer: IR

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRFS3307Z IR 20 In Stock

Description and Introduction

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRFS3307Z is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer Specifications:**
- **Manufacturer:** International Rectifier (IR)  
- **Type:** N-Channel Power MOSFET  
- **Package:** TO-220AB  
- **Drain-Source Voltage (VDSS):** 75V  
- **Continuous Drain Current (ID):** 110A  
- **Pulsed Drain Current (IDM):** 440A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 4.5mΩ (max) at VGS = 10V  
- **Total Gate Charge (Qg):** 150nC (typical)  
- **Input Capacitance (Ciss):** 5200pF (typical)  
- **Output Capacitance (Coss):** 1100pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 300pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Turn-Off Delay Time (td(off)):** 40ns (typical)  
- **Operating Temperature Range:** -55°C to +175°C  

### **Description:**
The IRFS3307Z is a high-performance N-Channel MOSFET designed for power switching applications. It features low on-resistance and high current handling capability, making it suitable for motor control, power supplies, and DC-DC converters.

### **Features:**
- Low RDS(on) for reduced conduction losses  
- High current capability (110A continuous)  
- Fast switching performance  
- Robust and reliable TO-220AB package  
- Avalanche energy rated for ruggedness  
- Optimized for high-efficiency power conversion  

This information is based solely on the manufacturer’s datasheet and technical documentation.

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