HEXFET Power MOSFET The IRFS3607PBF is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** International Rectifier (IR)
- **Part Number:** IRFS3607PBF
- **Type:** N-Channel Power MOSFET
- **Technology:** HEXFET®
- **Drain-Source Voltage (VDSS):** 60V
- **Continuous Drain Current (ID):** 180A (at 25°C)
- **Pulsed Drain Current (IDM):** 720A
- **Gate-Source Voltage (VGS):** ±20V
- **Power Dissipation (PD):** 300W (at 25°C)
- **RDS(on) (Max):** 3.7mΩ (at VGS = 10V)
- **RDS(on) (Max):** 4.5mΩ (at VGS = 4.5V)
- **Threshold Voltage (VGS(th)):** 2V (Min), 4V (Max)
- **Input Capacitance (Ciss):** 8400pF
- **Output Capacitance (Coss):** 2200pF
- **Reverse Transfer Capacitance (Crss):** 300pF
- **Operating Temperature Range:** -55°C to +175°C
- **Package:** TO-263 (D2PAK)
### **Descriptions:**
- The IRFS3607PBF is a high-performance N-Channel MOSFET designed for power management applications.
- It features low on-resistance (RDS(on)) and high current handling capability, making it suitable for switching applications.
- The device is optimized for efficiency in power conversion circuits, motor control, and DC-DC converters.
### **Features:**
- **Low RDS(on):** Enhances efficiency by reducing conduction losses.
- **High Current Capability:** Supports high-power applications.
- **Fast Switching:** Optimized for high-frequency switching.
- **Avalanche Energy Rated:** Provides robustness in rugged environments.
- **Lead-Free & RoHS Compliant:** Meets environmental standards.
This information is based solely on the manufacturer's datasheet and technical documentation.
