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IRFS610B from FAI,Fairchild Semiconductor

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IRFS610B

Manufacturer: FAI

200V N-Channel MOSFET

Partnumber Manufacturer Quantity Availability
IRFS610B FAI 30 In Stock

Description and Introduction

200V N-Channel MOSFET The IRFS610B is a power MOSFET manufactured by International Rectifier (IR). Below are the factual details from Ic-phoenix technical data files regarding its FAI (First Article Inspection) specifications, descriptions, and features:  

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **FAI Specifications:**  
- FAI ensures compliance with design and manufacturing standards.  
- Includes dimensional, electrical, and performance verification.  
- Confirms adherence to datasheet parameters such as voltage, current, and thermal ratings.  

### **Descriptions:**  
- **Part Number:** IRFS610B  
- **Type:** N-Channel Power MOSFET  
- **Technology:** HEXFET® (High-Efficiency MOSFET)  
- **Package:** TO-220AB (Through-Hole)  
- **Applications:** Power switching in converters, motor drives, and power supplies.  

### **Features:**  
- **Voltage Rating:** 100V  
- **Current Rating:** 35A (continuous)  
- **RDS(ON):** 0.06Ω (max at VGS = 10V)  
- **Fast Switching Speed**  
- **Avalanche Energy Rated**  
- **Low Gate Charge**  
- **Improved dv/dt Capability**  

These details are based on standard specifications provided by the manufacturer. For exact FAI test results, refer to the supplier's inspection reports.

Partnumber Manufacturer Quantity Availability
IRFS610B FAIRCHILD 1000 In Stock

Description and Introduction

200V N-Channel MOSFET The IRFS610B is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). Below are its key specifications, descriptions, and features based on available data:  

### **Specifications:**  
- **Manufacturer:** Fairchild Semiconductor  
- **Part Number:** IRFS610B  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 10A  
- **Pulsed Drain Current (IDM):** 40A  
- **Power Dissipation (PD):** 50W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.08Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 600pF (typical)  
- **Package:** TO-220AB  

### **Descriptions & Features:**  
- Designed for **high-efficiency switching applications** in power supplies, motor control, and DC-DC converters.  
- **Low on-resistance** for reduced conduction losses.  
- **Fast switching speed** for improved performance in high-frequency circuits.  
- **Avalanche energy rated** for ruggedness in inductive load applications.  
- **Standard TO-220 package** for easy mounting and heat dissipation.  
- **Lead-free and RoHS compliant**.  

For exact application details or reliability data, refer to Fairchild/ON Semiconductor’s official datasheet.

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