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IRFS630A from SEC

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IRFS630A

Manufacturer: SEC

Advanced Power MOSFET

Partnumber Manufacturer Quantity Availability
IRFS630A SEC 31 In Stock

Description and Introduction

Advanced Power MOSFET The IRFS630A is a power MOSFET manufactured by SEC (Samsung Electronics Co., Ltd.). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** SEC (Samsung Electronics Co., Ltd.)  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 200V  
- **Continuous Drain Current (ID):** 9.3A  
- **Pulsed Drain Current (IDM):** 37A  
- **Power Dissipation (PD):** 75W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.4Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 600pF  
- **Output Capacitance (Coss):** 150pF  
- **Reverse Transfer Capacitance (Crss):** 50pF  
- **Turn-On Delay Time (td(on)):** 10ns  
- **Turn-Off Delay Time (td(off)):** 35ns  
- **Operating Temperature Range:** -55°C to +150°C  

### **Description:**  
The IRFS630A is a high-voltage N-Channel MOSFET designed for power switching applications. It features low on-resistance and fast switching speeds, making it suitable for use in power supplies, motor control, and DC-DC converters.  

### **Features:**  
- Low on-resistance (RDS(on))  
- Fast switching performance  
- High ruggedness and reliability  
- Low gate charge for improved efficiency  
- Avalanche energy specified  

This information is based on the manufacturer's datasheet and technical documentation.

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