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IRFU120NPBF from IR,International Rectifier

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IRFU120NPBF

Manufacturer: IR

100V Single N-Channel HEXFET Power MOSFET in a I-Pak package

Partnumber Manufacturer Quantity Availability
IRFU120NPBF IR 12000 In Stock

Description and Introduction

100V Single N-Channel HEXFET Power MOSFET in a I-Pak package The IRFU120NPBF is a power MOSFET manufactured by International Rectifier (IR). Here are its key specifications, descriptions, and features:

### **Specifications:**  
- **Manufacturer:** International Rectifier (IR)  
- **Part Number:** IRFU120NPBF  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 100V  
- **Continuous Drain Current (ID):** 14A  
- **Pulsed Drain Current (IDM):** 56A  
- **Power Dissipation (PD):** 48W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.27Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 500pF (typical)  
- **Output Capacitance (Coss):** 130pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)  
- **Turn-On Delay Time (td(on)):** 10ns (typical)  
- **Turn-Off Delay Time (td(off)):** 35ns (typical)  
- **Operating Temperature Range:** -55°C to +175°C  
- **Package:** TO-220AB  

### **Description:**  
The IRFU120NPBF is a rugged N-Channel MOSFET designed for high-efficiency switching applications. It offers low on-resistance and fast switching speeds, making it suitable for power supplies, motor control, and DC-DC converters.  

### **Features:**  
- **Low On-Resistance:** Minimizes conduction losses.  
- **Fast Switching:** Enhances efficiency in high-frequency applications.  
- **Avalanche Energy Rated:** Provides robustness in inductive load conditions.  
- **Improved dv/dt Capability:** Ensures reliable performance in demanding environments.  
- **TO-220 Package:** Allows for easy mounting and heat dissipation.  

This information is based solely on the manufacturer's datasheet and technical specifications.

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