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IRFZ34PBF from IR,International Rectifier

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13.672ms

IRFZ34PBF

Manufacturer: IR

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRFZ34PBF IR 2270 In Stock

Description and Introduction

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRFZ34PBF is a Power MOSFET manufactured by International Rectifier (IR). Here are the key specifications, descriptions, and features:  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 55V  
- **Continuous Drain Current (ID):** 30A  
- **Pulsed Drain Current (IDM):** 120A  
- **Power Dissipation (PD):** 50W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.042Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 1100pF (typical)  
- **Output Capacitance (Coss):** 350pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 100pF (typical)  
- **Turn-On Delay Time (td(on)):** 10ns (typical)  
- **Turn-Off Delay Time (td(off)):** 34ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-220AB  

### **Description:**  
The IRFZ34PBF is an N-channel MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching speeds, making it suitable for power management in DC-DC converters, motor control, and other high-current applications.  

### **Features:**  
- **Advanced HEXFET® Technology** for low conduction losses  
- **Low Gate Charge** for fast switching performance  
- **Avalanche Energy Specified** for ruggedness  
- **Fully Characterized for Linear Mode Operation**  
- **Lead-Free & RoHS Compliant**  

This information is based on the manufacturer's datasheet.

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