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IRFZ40 from IR,International Rectifier

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IRFZ40

Manufacturer: IR

Trans MOSFET N-CH 50V 35A 3-Pin(3+Tab) TO-220AB

Partnumber Manufacturer Quantity Availability
IRFZ40 IR 545 In Stock

Description and Introduction

Trans MOSFET N-CH 50V 35A 3-Pin(3+Tab) TO-220AB The IRFZ40 is a power MOSFET manufactured by International Rectifier (IR). Below are its key specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Specifications:**
- **Drain-Source Voltage (VDSS):** 55V  
- **Continuous Drain Current (ID):** 35A (at 25°C)  
- **Pulsed Drain Current (IDM):** 140A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 125W (at 25°C)  
- **On-Resistance (RDS(on)):** 0.028Ω (max at VGS = 10V, ID = 20A)  
- **Threshold Voltage (VGS(th)):** 2-4V  
- **Input Capacitance (Ciss):** 1800pF (typical)  
- **Output Capacitance (Coss):** 400pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 100pF (typical)  
- **Turn-On Delay Time (td(on)):** 12ns (typical)  
- **Turn-Off Delay Time (td(off)):** 44ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The IRFZ40 is an N-channel power MOSFET designed for high-speed switching applications. It is commonly used in power supplies, motor control, and DC-DC converters due to its low on-resistance and high current handling capability.  

### **Features:**  
- **Advanced HEXFET® Technology** for high efficiency and ruggedness.  
- **Low On-Resistance** minimizes conduction losses.  
- **Fast Switching Speed** for improved performance in high-frequency applications.  
- **Avalanche Energy Rated** for enhanced reliability.  
- **Fully Characterized for Dynamic Performance** to ensure stable operation.  
- **Lead-Free and RoHS Compliant** for environmental safety.  

The IRFZ40 is packaged in a TO-220AB through-hole package, making it suitable for various power electronics applications.

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