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IRFZ44NPBF from IR,International Rectifier

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IRFZ44NPBF

Manufacturer: IR

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRFZ44NPBF IR 1700 In Stock

Description and Introduction

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRFZ44NPBF is a power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 55V  
- **Continuous Drain Current (ID):** 49A (at 25°C)  
- **Pulsed Drain Current (IDM):** 160A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 94W (at 25°C)  
- **On-Resistance (RDS(on)):** 17.5mΩ (max at VGS = 10V)  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 1800pF (typical)  
- **Output Capacitance (Coss):** 400pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 100pF (typical)  
- **Turn-On Delay Time (td(on)):** 12ns (typical)  
- **Turn-Off Delay Time (td(off)):** 44ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Description:**  
The IRFZ44NPBF is an N-channel power MOSFET designed for high-efficiency switching applications. It features low on-resistance, fast switching speeds, and robust thermal performance, making it suitable for power supplies, motor control, and DC-DC converters.  

### **Features:**  
- Advanced process technology for low RDS(on)  
- High current handling capability  
- Fast switching performance  
- Improved dv/dt capability  
- Lead-free and RoHS compliant  
- TO-220AB package for easy mounting  

This information is based solely on the manufacturer's datasheet.

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