60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRFZ44VPBF is a Power MOSFET manufactured by International Rectifier (IR). Below are the factual details about its specifications, descriptions, and features:
### **Specifications:**
- **Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 60V
- **Continuous Drain Current (ID):** 49A (at 25°C)
- **Pulsed Drain Current (IDM):** 160A
- **Gate-Source Voltage (VGS):** ±20V
- **Power Dissipation (PD):** 94W (at 25°C)
- **On-Resistance (RDS(on)):** 17.5mΩ (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 2V to 4V
- **Input Capacitance (Ciss):** 1800pF (typical)
- **Output Capacitance (Coss):** 350pF (typical)
- **Reverse Transfer Capacitance (Crss):** 130pF (typical)
- **Operating Temperature Range:** -55°C to +175°C
- **Package:** TO-220AB
### **Descriptions:**
- The IRFZ44VPBF is a high-performance N-Channel MOSFET designed for power switching applications.
- It features low on-resistance and fast switching characteristics, making it suitable for high-efficiency power conversion.
- The device is robust and can handle high current and voltage levels, commonly used in motor control, power supplies, and DC-DC converters.
### **Features:**
- **Low On-Resistance (RDS(on)):** Enhances efficiency by reducing conduction losses.
- **Fast Switching Speed:** Improves performance in high-frequency applications.
- **Avalanche Energy Specified:** Ensures reliability under inductive load conditions.
- **Improved dv/dt Capability:** Reduces susceptibility to voltage spikes.
- **Lead-Free & RoHS Compliant:** Environmentally friendly manufacturing.
This information is based solely on the manufacturer's datasheet and specifications.
