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IRFZ48 from IR,International Rectifier

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IRFZ48

Manufacturer: IR

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Partnumber Manufacturer Quantity Availability
IRFZ48 IR 1 In Stock

Description and Introduction

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package The IRFZ48 is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
International Rectifier (IR)  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 55V  
- **Continuous Drain Current (ID):** 64A  
- **Pulsed Drain Current (IDM):** 110A  
- **Power Dissipation (PD):** 140W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.018Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 3800pF  
- **Output Capacitance (Coss):** 1000pF  
- **Reverse Transfer Capacitance (Crss):** 300pF  
- **Turn-On Delay Time (td(on)):** 18ns  
- **Rise Time (tr):** 60ns  
- **Turn-Off Delay Time (td(off)):** 60ns  
- **Fall Time (tf):** 25ns  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-220AB  

### **Description:**  
The IRFZ48 is a high-current, low-on-resistance N-channel MOSFET designed for power switching applications. It is commonly used in motor control, power supplies, DC-DC converters, and other high-efficiency switching circuits.  

### **Features:**  
- Low on-resistance for reduced conduction losses  
- Fast switching speed  
- High current handling capability  
- Robust thermal performance  
- Avalanche energy specified  
- Improved dv/dt capability  

This information is based on the manufacturer's datasheet and technical documentation.

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