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IRG4PH30K from IR,International Rectifier

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IRG4PH30K

Manufacturer: IR

1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package

Partnumber Manufacturer Quantity Availability
IRG4PH30K IR 12000 In Stock

Description and Introduction

1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package The IRG4PH30K is an IGBT (Insulated Gate Bipolar Transistor) manufactured by International Rectifier (IR).  

### **Specifications:**  
- **Voltage Rating (VCES):** 900V  
- **Current Rating (IC @25°C):** 23A  
- **Current Rating (IC @100°C):** 14A  
- **Gate-Emitter Voltage (VGE):** ±20V  
- **Power Dissipation (PD):** 160W  
- **Switching Speed:** Fast switching with low switching losses  
- **Package:** TO-247AC  

### **Descriptions & Features:**  
- Designed for high-efficiency power switching applications.  
- Low saturation voltage (VCE(sat)) for reduced conduction losses.  
- High input impedance and simple drive requirements.  
- Robust and reliable performance in motor drives, inverters, and power supplies.  
- Co-packaged with an ultrafast recovery anti-parallel diode for improved performance in inductive load applications.  
- Suitable for high-frequency switching due to low switching losses.  

This IGBT is optimized for industrial and automotive applications requiring high power handling and efficiency.

Application Scenarios & Design Considerations

1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package

Alternative Part Number

  • HGTG30N60A4 --: 600V N-channel IGBT in TO-247 with similar current rating and low saturation voltage, a common drop-in replacement for the IRG4PH30K in switching applications.
  • STGW30NC60WD --: 600V 30A ultrafast IGBT in TO-247 with integrated freewheeling diode, offering comparable switching performance and ruggedness for motor drive and power supply use.
  • FGA25N120ANTD --: 1200V NPT IGBT in TO-247 with higher voltage margin and similar package, suitable where extra breakdown headroom is acceptable in place of the IRG4PH30K.

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