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IRLMS6802TR from IR,International Rectifier

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31.250ms

IRLMS6802TR

Manufacturer: IR

-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package

Partnumber Manufacturer Quantity Availability
IRLMS6802TR IR 120000 In Stock

Description and Introduction

-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package The IRLMS6802TR is a power MOSFET manufactured by Infineon Technologies. Below are the specifications, descriptions, and features based on Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **Specifications:**  
- **Drain-Source Voltage (VDS):** 20V  
- **Continuous Drain Current (ID):** 4.3A  
- **Pulsed Drain Current (IDM):** 17A  
- **RDS(on) (Max) @ VGS = 4.5V:** 0.027Ω  
- **RDS(on) (Max) @ VGS = 2.5V:** 0.035Ω  
- **Gate-Source Voltage (VGS):** ±12V  
- **Power Dissipation (PD):** 2.5W  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  
- **Package:** SOT-23  

### **Description:**  
The IRLMS6802TR is a small-signal N-channel MOSFET designed for low-voltage, high-efficiency switching applications. It is optimized for fast switching performance and low on-resistance, making it suitable for power management in portable devices, DC-DC converters, and load switching.  

### **Features:**  
- Low on-resistance (RDS(on))  
- Fast switching speed  
- Low gate charge  
- Small SOT-23 package for space-constrained applications  
- Lead-free and RoHS compliant  

This information is strictly based on the manufacturer's datasheet. For detailed performance curves and application notes, refer to Infineon's official documentation.

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