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IRLR4343 from IR,International Rectifier

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IRLR4343

Manufacturer: IR

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRLR4343 IR 25200 In Stock

Description and Introduction

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRLR4343 is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **IRLR4343 Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 55V  
- **Continuous Drain Current (ID):** 30A (at 25°C)  
- **Pulsed Drain Current (IDM):** 120A  
- **Power Dissipation (PD):** 38W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):**  
  - 0.028Ω (at VGS = 10V, ID = 15A)  
  - 0.035Ω (at VGS = 4.5V, ID = 15A)  
- **Threshold Voltage (VGS(th)):** 2V (min) to 4V (max)  
- **Total Gate Charge (Qg):** 25nC (typical)  
- **Input Capacitance (Ciss):** 1100pF (typical)  
- **Output Capacitance (Coss):** 250pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 80pF (typical)  
- **Avalanche Energy (EAS):** 200mJ (single pulse)  
- **Operating Temperature Range:** -55°C to +175°C  

### **Descriptions & Features:**  
- **Low On-Resistance:** Optimized for high-efficiency power switching.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Rated:** Enhanced ruggedness for inductive loads.  
- **Logic-Level Gate Drive:** Can be driven by 4.5V gate-source voltage.  
- **TO-220AB Package:** Industry-standard through-hole package for easy mounting.  
- **Applications:**  
  - DC-DC converters  
  - Motor control  
  - Power supplies  
  - Switching regulators  

This information is based on the manufacturer's datasheet for the IRLR4343 MOSFET.

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