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IRLR7811W from IR,International Rectifier

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15.625ms

IRLR7811W

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRLR7811W IR 25200 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRLR7811W is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features based on available knowledge:

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Specifications:**  
- **Type:** N-Channel HEXFET Power MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 78A (at 25°C)  
- **Pulsed Drain Current (IDM):** 312A  
- **RDS(on) (Max):** 3.7 mΩ (at VGS = 10V)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-262 (D2PAK)  

### **Descriptions & Features:**  
- Designed for high-efficiency power switching applications.  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Fast switching performance.  
- Optimized for use in synchronous rectification and DC-DC converters.  
- Avalanche energy specified for ruggedness in inductive load applications.  
- Lead-free and RoHS compliant.  

For exact performance characteristics, always refer to the official datasheet.

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