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IRLR7821 from IR,International Rectifier

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IRLR7821

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRLR7821 IR 2500 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRLR7821 is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features based on available data:

### **Specifications:**
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 110W (at 25°C)  
- **On-Resistance (RDS(on)):** 4.5mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1.0V to 2.0V  
- **Total Gate Charge (Qg):** 60nC (typical)  
- **Input Capacitance (Ciss):** 3900pF  
- **Output Capacitance (Coss):** 1100pF  
- **Reverse Transfer Capacitance (Crss):** 200pF  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions and Features:**  
- **Technology:** HEXFET® Power MOSFET  
- **Low On-Resistance:** Optimized for high-efficiency switching applications.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Energy Rated:** Provides ruggedness under transient conditions.  
- **Logic-Level Gate Drive:** Can be driven by low-voltage control circuits (VGS = 4.5V).  
- **Applications:** Used in power supplies, motor control, DC-DC converters, and battery management systems.  

This information is based on the manufacturer's datasheet for the IRLR7821. For exact performance characteristics, refer to the official documentation.

Application Scenarios & Design Considerations

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

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