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IRLR7833PBF from IR,International Rectifier

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IRLR7833PBF

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRLR7833PBF IR 48 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRLR7833PBF is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** Infineon Technologies  
- **Part Number:** IRLR7833PBF  
- **Type:** N-Channel HEXFET Power MOSFET  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 100A (at 25°C)  
- **Pulsed Drain Current (IDM):** 400A  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **RDS(on) (Max):** 3.3mΩ (at VGS = 10V, ID = 50A)  
- **Threshold Voltage (VGS(th)):** 1.0V to 2.5V  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-252 (DPAK)  

### **Descriptions and Features:**  
- **Low On-Resistance:** Optimized for high-efficiency power switching applications.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Rated:** Robust performance under inductive load conditions.  
- **Logic-Level Gate Drive:** Can be driven by low-voltage control signals (as low as 4.5V).  
- **Lead-Free & RoHS Compliant:** Environmentally friendly manufacturing.  
- **Applications:** Used in DC-DC converters, motor control, power management, and battery protection circuits.  

This information is based on the manufacturer's datasheet and technical documentation.

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