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IRLR7833TR from IR,International Rectifier

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IRLR7833TR

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRLR7833TR IR 13000 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRLR7833TR is a Power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features based on available data:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRLR7833TR  

### **Type:**  
N-Channel Power MOSFET  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 180A (at 25°C)  
- **Pulsed Drain Current (IDM):** 360A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 1.3mΩ (max) at VGS = 10V  
- **Power Dissipation (PD):** 330W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Package:**  
D2PAK (TO-263)  

### **Features:**  
- **Low On-Resistance:** Optimized for high-efficiency power switching.  
- **High Current Handling:** Supports high continuous and pulsed drain currents.  
- **Fast Switching:** Suitable for high-frequency applications.  
- **Avalanche Rated:** Robust design for rugged applications.  
- **Logic-Level Gate Drive:** Can be driven by low-voltage gate signals.  

### **Applications:**  
- DC-DC Converters  
- Motor Control  
- Power Management Systems  
- Battery Protection Circuits  

This information is based on Infineon’s datasheet for the IRLR7833TR. For precise design considerations, always refer to the official documentation.

Application Scenarios & Design Considerations

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

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