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IRLR7833TRR from IR,International Rectifier

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IRLR7833TRR

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRLR7833TRR IR 2700 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRLR7833TRR is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Part Number:**  
- **IRLR7833TRR**  

### **Specifications:**  
- **Transistor Type:** N-Channel  
- **Technology:** HEXFET Power MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 84A (at 25°C)  
- **Pulsed Drain Current (IDM):** 330A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **On-Resistance (RDS(on)):** 1.7mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1.0V (min) to 2.0V (max)  
- **Input Capacitance (Ciss):** 4200pF  
- **Output Capacitance (Coss):** 1100pF  
- **Reverse Transfer Capacitance (Crss):** 200pF  
- **Turn-On Delay Time (td(on)):** 13ns  
- **Rise Time (tr):** 35ns  
- **Turn-Off Delay Time (td(off)):** 32ns  
- **Fall Time (tf):** 15ns  
- **Package:** D2PAK (TO-263)  

### **Descriptions & Features:**  
- **Low On-Resistance (RDS(on)):** Optimized for high-efficiency power switching applications.  
- **Fast Switching Speed:** Suitable for high-frequency switching applications.  
- **Avalanche Energy Specified:** Enhances ruggedness in inductive load applications.  
- **Fully Characterized for Linear Mode Operation:** Ensures reliable performance in linear applications.  
- **Low Gate Charge (Qg):** Reduces switching losses.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is based solely on the manufacturer's datasheet and technical documentation.

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