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IRLR8113TR from IR,International Rectifier

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IRLR8113TR

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRLR8113TR IR 4000 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRLR8113TR is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Specifications:**  
- **Type:** N-Channel HEXFET Power MOSFET  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 62A (at 25°C)  
- **Pulsed Drain Current (IDM):** 250A  
- **RDS(on) (Max):** 4.5mΩ (at VGS = 10V, ID = 31A)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 79W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** D2PAK (TO-263)  

### **Descriptions:**  
- The IRLR8113TR is a high-current, low on-resistance N-Channel MOSFET designed for power management applications.  
- It is optimized for high-efficiency switching in DC-DC converters, motor control, and other power applications.  

### **Features:**  
- **Low RDS(on)** for reduced conduction losses.  
- **Fast switching** performance for high-frequency applications.  
- **Avalanche energy rated** for ruggedness in inductive load switching.  
- **Fully characterized for 100% Rg tested** to ensure consistent performance.  
- **Lead-free and RoHS compliant** for environmental safety.  

This information is based on the manufacturer's datasheet and technical documentation.

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