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IRLU3103 from IR,International Rectifier

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IRLU3103

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a I-Pak package

Partnumber Manufacturer Quantity Availability
IRLU3103 IR 30000 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a I-Pak package The IRLU3103 is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features from the manufacturer's datasheet:

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 25V  
- **Continuous Drain Current (ID):** 46A (at 25°C)  
- **Pulsed Drain Current (IDM):** 180A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 140W (at 25°C)  
- **On-Resistance (RDS(on)):** 0.006Ω (max at VGS = 10V, ID = 30A)  
- **Threshold Voltage (VGS(th)):** 1.0V to 2.0V  

### **Description:**  
The IRLU3103 is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching performance, making it suitable for power management in DC-DC converters, motor control, and other high-current applications.  

### **Features:**  
- **Advanced Process Technology:** Optimized for low RDS(on) and high current handling.  
- **Fast Switching:** Minimizes switching losses in high-frequency applications.  
- **Avalanche Energy Rated:** Provides ruggedness under transient conditions.  
- **Low Gate Charge:** Enhances efficiency in high-frequency switching circuits.  
- **TO-220AB Package:** Industry-standard package with good thermal performance.  

For detailed electrical characteristics and performance curves, refer to the official International Rectifier datasheet.

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