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IRLZ24STRR from IR,International Rectifier

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IRLZ24STRR

Manufacturer: IR

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRLZ24STRR IR 19200 In Stock

Description and Introduction

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRLZ24STRR is a Power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from the manufacturer's datasheet:

### **Manufacturer:**  
Infineon Technologies  

### **Part Number:**  
IRLZ24STRR  

### **Description:**  
The IRLZ24STRR is a N-channel HEXFET Power MOSFET designed for high-speed switching applications. It is optimized for low gate drive power and fast switching performance.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 55V  
- **Continuous Drain Current (ID):** 17A (at 25°C)  
- **Pulsed Drain Current (IDM):** 68A  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):**  
  - 0.07Ω (at VGS = 10V)  
  - 0.1Ω (at VGS = 5V)  
- **Power Dissipation (PD):** 38W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Input Capacitance (Ciss):** 910pF  
- **Output Capacitance (Coss):** 190pF  
- **Reverse Transfer Capacitance (Crss):** 70pF  

### **Features:**  
- Advanced Process Technology  
- Low On-Resistance  
- Fast Switching Speed  
- Improved dv/dt Capability  
- 100% Avalanche Tested  
- Lead-Free & RoHS Compliant  

### **Package:**  
TO-252 (DPAK)  

This information is sourced directly from the manufacturer’s datasheet. For detailed application notes and performance curves, refer to the official Infineon documentation.

Application Scenarios & Design Considerations

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

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