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IS41C16100-50K from ISSI

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IS41C16100-50K

Manufacturer: ISSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Partnumber Manufacturer Quantity Availability
IS41C16100-50K,IS41C1610050K ISSI 20 In Stock

Description and Introduction

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE The IS41C16100-50K is a 16Mbit (1M x 16) CMOS DRAM manufactured by ISSI (Integrated Silicon Solution Inc.).  

### **Specifications:**  
- **Density:** 16Mbit (1M words × 16 bits)  
- **Organization:** 1,048,576 words × 16 bits  
- **Access Time:** 50 ns  
- **Operating Voltage:** 3.3V ± 0.3V  
- **Refresh Cycles:** 4,096 cycles every 64ms  
- **Package:** 50-pin TSOP (Thin Small Outline Package)  
- **Interface:** Asynchronous  
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  

### **Descriptions & Features:**  
- Low-power CMOS technology  
- Fully static operation (no clock required)  
- Automatic refresh (CAS-before-RAS refresh)  
- Hidden refresh capability  
- Fast page mode operation  
- Single 3.3V power supply  
- TTL-compatible inputs and outputs  
- Industry-standard pinout  

This DRAM is commonly used in embedded systems, networking, and telecommunications applications.

Application Scenarios & Design Considerations

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Alternative Part Number

  • AS4C1M16S-50TCN --: Pin-compatible 1M x 16 asynchronous DRAM with 50 ns speed grade, direct drop-in replacement for the IS41C16100.
  • MT4C1M16C3-5 --: 1M x 16 fast page mode DRAM with comparable 50 ns access time and similar SOJ package, suitable functional substitute.
  • HM5116100-5 --: 1M x 16 DRAM with 50 ns speed grade and matching interface, usable as an alternative with minor timing verification.

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