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IS41LV16100-60T from ISSI

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IS41LV16100-60T

Manufacturer: ISSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Partnumber Manufacturer Quantity Availability
IS41LV16100-60T,IS41LV1610060T ISSI 6960 In Stock

Description and Introduction

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE The IS41LV16100-60T is a high-speed 1M x 16-bit CMOS synchronous DRAM (SDRAM) manufactured by ISSI (Integrated Silicon Solution, Inc.). Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Organization:** 1,048,576 words × 16 bits  
- **Operating Voltage:** 3.3V ± 0.3V  
- **Speed Grade:** 60ns (6ns clock cycle time at CL=3)  
- **Refresh Cycles:** 4,096 refresh cycles every 64ms  
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Package:** 54-pin TSOP (Thin Small Outline Package)  

### **Descriptions:**
- Fully synchronous operation with a single 3.3V power supply.  
- Supports burst read and write operations.  
- Programmable burst lengths (1, 2, 4, 8, or full page).  
- Auto Refresh (CBR) and Self Refresh modes.  
- Compatible with JEDEC-standard SDRAM timing.  

### **Features:**
- **CAS Latency (CL) Options:** 2 or 3 (programmable).  
- **Burst Mode:** Supports sequential or interleaved burst ordering.  
- **Low Power Consumption:** Standby and power-down modes for reduced power usage.  
- **Input/Output:** LVTTL-compatible I/O.  
- **Bank Organization:** 2 internal banks for concurrent operations.  
- **Command Set:** Standard SDRAM commands (ACTIVE, READ, WRITE, PRECHARGE, etc.).  

This SDRAM is commonly used in networking, telecommunications, and embedded systems requiring high-speed memory access.

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