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IS41LV16100-60TI from ISSI

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IS41LV16100-60TI

Manufacturer: ISSI

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Partnumber Manufacturer Quantity Availability
IS41LV16100-60TI,IS41LV1610060TI ISSI 6820 In Stock

Description and Introduction

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE The IS41LV16100-60TI is a 16Mbit (1M x 16) high-speed CMOS synchronous DRAM manufactured by ISSI (Integrated Silicon Solution, Inc.).  

### **Key Specifications:**  
- **Density:** 16Mbit (1M words × 16 bits)  
- **Organization:** 1,048,576 words × 16 bits  
- **Speed Grade:** 60ns (6ns clock cycle time at CL=3)  
- **Supply Voltage:** 3.3V ± 0.3V  
- **Operating Temperature Range:** -40°C to +85°C  
- **Package:** 54-pin TSOP (Thin Small Outline Package)  
- **Refresh Cycles:** 4,096 refresh cycles every 64ms  

### **Features:**  
- Fully synchronous operation with a single 3.3V power supply  
- Internal pipelined architecture for high-speed operation  
- Programmable burst lengths (1, 2, 4, 8, or full page)  
- Auto Refresh (CBR) and Self Refresh modes  
- CAS Latency (CL) options: 2, 3  
- Byte control for write operations (UB#, LB#)  
- Low power consumption with standby and power-down modes  
- JEDEC-standard pinout  

This DRAM is commonly used in applications requiring high-speed data access, such as networking, telecommunications, and embedded systems.

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