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IS42S16160D-75ETLI from ISSI

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IS42S16160D-75ETLI

Manufacturer: ISSI

32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM

Partnumber Manufacturer Quantity Availability
IS42S16160D-75ETLI,IS42S16160D75ETLI ISSI 2148 In Stock

Description and Introduction

32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM The **IS42S16160D-75ETLI** is a **16M x 16-bit (256Mb) Synchronous Dynamic RAM (SDRAM)** manufactured by **Integrated Silicon Solution Inc. (ISSI)**. Below are its key specifications, descriptions, and features:

### **Key Specifications:**
- **Density:** 256Mb (16M words × 16 bits)  
- **Organization:** 4 banks × 8,192 rows × 512 columns × 16 bits  
- **Voltage Supply:** 3.3V (±0.3V)  
- **Speed:** 7.5ns (133MHz clock frequency)  
- **CAS Latency (CL):** 2, 3 programmable  
- **Refresh Cycles:** 4,096 refresh cycles every 64ms  
- **Operating Temperature:** -40°C to +85°C (Industrial)  
- **Package:** 54-pin TSOP-II (400mil width)  

### **Descriptions:**
- Fully synchronous operation with a single 3.3V power supply  
- Internal pipelined architecture for high-speed data transfer  
- Auto refresh and self refresh modes supported  
- Programmable burst lengths (1, 2, 4, 8, or full page)  
- Sequential or interleaved burst mode options  

### **Features:**
- **Low Power Consumption:**  
  - Active current: 120mA (typical)  
  - Standby current: 15mA (typical)  
  - Self-refresh current: 2mA (typical)  
- **Burst Read/Write Operations**  
- **Auto Precharge Option**  
- **Compatible with JEDEC Standard SDRAM**  
- **RoHS Compliant**  

This SDRAM is commonly used in **networking, telecommunications, industrial, and embedded systems** requiring high-speed, low-power memory.  

Would you like additional details on any specific aspect?

Partnumber Manufacturer Quantity Availability
IS42S16160D-75ETLI,IS42S16160D75ETLI ISSI. 13 In Stock

Description and Introduction

32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM The **IS42S16160D-75ETLI** is a Synchronous Dynamic RAM (SDRAM) manufactured by **Integrated Silicon Solution, Inc. (ISSI)**. Below are its specifications, descriptions, and features:  

### **Specifications:**  
- **Density:** 256Mb (16M x 16)  
- **Organization:** 4 Banks x 4M x 16  
- **Voltage:** 3.3V (±0.3V)  
- **Speed:** 75MHz (CL=2, 3)  
- **Access Time:** 5.4ns (max)  
- **Refresh:** 4096 refresh cycles / 64ms  
- **Interface:** LVTTL  
- **Package:** 54-pin TSOP-II (400mil)  
- **Operating Temperature:** Industrial (-40°C to +85°C)  

### **Descriptions:**  
- **Type:** High-speed CMOS SDRAM  
- **Applications:** Networking, telecommunications, embedded systems, and industrial applications  
- **Compliance:** Fully compliant with JEDEC standards  

### **Features:**  
- **Auto Refresh & Self Refresh**  
- **Programmable Burst Length (1, 2, 4, 8, or Full Page)**  
- **Sequential or Interleave Burst Mode**  
- **Single 3.3V Power Supply**  
- **CAS Latency (CL):** 2 or 3 cycles  
- **Data Mask (DM) for Write Control**  
- **RoHS Compliant**  

This SDRAM is designed for high-performance, low-power applications requiring reliable memory solutions.

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