16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM The IS42S32400A-10TI is a synchronous DRAM (SDRAM) manufactured by Integrated Silicon Solution Inc. (ISSI). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Part Number:** IS42S32400A-10TI
- **Manufacturer:** ISSI (Integrated Silicon Solution Inc.)
- **Type:** Synchronous DRAM (SDRAM)
- **Density:** 128Mb (4M x 32-bit)
- **Organization:** 4 banks x 1,048,576 words x 32 bits
- **Voltage:** 3.3V (±0.3V)
- **Speed:** 10ns (100MHz clock frequency)
- **Access Time:** 6ns (from clock rise)
- **Refresh:** 4,096 refresh cycles / 64ms
- **Interface:** LVTTL
- **Package:** 86-pin TSOP-II (400mil width)
- **Operating Temperature:** Industrial (-40°C to +85°C)
### **Descriptions:**
- The IS42S32400A-10TI is a high-speed CMOS SDRAM designed for applications requiring high bandwidth and low power consumption.
- It supports fully synchronous operation with a single 3.3V power supply.
- Features programmable burst lengths and burst sequences for efficient data transfer.
- Includes an auto refresh and self refresh mode for power-saving applications.
### **Features:**
- **High Performance:** 100MHz operation with 10ns clock cycle time.
- **Low Power Consumption:** Supports auto and self refresh modes.
- **Programmable Burst Length:** 1, 2, 4, 8, or full-page.
- **Sequential or Interleaved Burst Mode:** Configurable for optimized data access.
- **CAS Latency Options:** 2 or 3 programmable.
- **Single 3.3V Power Supply:** Reduces power consumption.
- **Industrial Temperature Range:** Suitable for harsh environments (-40°C to +85°C).
- **Lead-Free & RoHS Compliant:** Meets environmental standards.
This information is based on the manufacturer's datasheet and technical documentation.
