4M x 32 128Mb SYNCHRONOUS DRAM The IS42S32400E-6B is a 128Mb (4M x 32-bit) Synchronous DRAM (SDRAM) manufactured by ISSI (Integrated Silicon Solution, Inc.). Below are its specifications, descriptions, and features:
### **Specifications:**
- **Density:** 128Mb (4,194,304 words × 32 bits)
- **Organization:** 4 banks × 1,048,576 rows × 32 bits
- **Voltage Supply:** 3.3V (±0.3V)
- **Speed Grade:** -6B (166MHz clock frequency, 6ns access time)
- **Interface:** Fully synchronous with all signals referenced to a positive clock edge
- **Refresh:** 4,096 refresh cycles every 64ms (auto-refresh and self-refresh modes)
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
### **Descriptions:**
- The IS42S32400E-6B is a high-speed CMOS SDRAM designed for applications requiring high bandwidth and low power consumption.
- It supports burst read/write operations with programmable burst lengths (1, 2, 4, 8, or full page).
- Features a pipelined architecture for high-speed data transfer.
- Includes an auto-precharge function for improved efficiency.
### **Features:**
- **Clock Frequency:** Up to 166MHz
- **CAS Latency (CL):** 2, 3 programmable
- **Burst Modes:** Sequential or Interleaved
- **Data Mask (DM) Control:** Byte-wise write control
- **Low Power Consumption:** Standby and power-down modes supported
- **Package Options:** 86-ball TSOP II (10mm × 22mm) or 90-ball FBGA (8mm × 13mm)
This SDRAM is commonly used in networking, telecommunications, embedded systems, and other high-performance computing applications.
