16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM The IS42S81600E-5TL is a synchronous DRAM (SDRAM) manufactured by ISSI (Integrated Silicon Solution Inc.). Below are its key specifications, descriptions, and features:
### **Specifications:**
- **Density:** 128Mb (8M x 16-bit)
- **Organization:** 4 Banks x 2M words x 16 bits
- **Voltage Supply:** 3.3V (±0.3V)
- **Speed Grade:** -5TL (5ns access time, 200MHz clock frequency)
- **Interface:** LVTTL (Low Voltage TTL)
- **Refresh Cycles:** 4096 refresh cycles every 64ms
- **Operating Temperature:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C) options
- **Package:** 54-pin TSOP-II (400mil width)
### **Descriptions:**
- The IS42S81600E-5TL is a high-speed CMOS SDRAM designed for applications requiring high bandwidth and low power consumption.
- It supports burst read/write operations with programmable burst lengths (1, 2, 4, 8, or full page).
- Features auto refresh and self-refresh modes for power-saving operation.
### **Features:**
- **Synchronous Operation:** Clock-controlled command and data transfer.
- **Programmable Burst Length:** Supports 1, 2, 4, 8, or full-page bursts.
- **Auto Precharge:** Optional auto precharge for row access commands.
- **CAS Latency Options:** Programmable CAS latency (2 or 3 cycles).
- **Low Power Consumption:** Standby and power-down modes reduce power usage.
- **Single 3.3V Power Supply:** Compatible with standard LVTTL interfaces.
- **Industrial-Grade Option:** Available for extended temperature range (-40°C to +85°C).
This information is based on the manufacturer's datasheet for the IS42S81600E-5TL SDRAM.
