32Mx8, 16Mx16 256Mb DDR Synchronous DRAM The IS43R16160B-6BI is a 256Mb (16M x 16) mobile low-power synchronous DRAM (SDRAM) manufactured by ISSI (Integrated Silicon Solution Inc.). Below are its key specifications, descriptions, and features:
### **Specifications:**
- **Density:** 256Mb (16M words × 16 bits)
- **Organization:** 4 banks × 4M words × 16 bits
- **Voltage Supply:** 1.7V–1.95V (VDD), 1.7V–3.6V (VDDQ)
- **Speed Grade:** -6BI (166MHz @ CL=3)
- **Operating Temperature:** Industrial (-40°C to +85°C)
- **Package:** 54-ball FBGA (8mm x 10mm, 0.8mm ball pitch)
- **Refresh Cycles:** 4K refresh cycles every 64ms
- **Burst Length:** 1, 2, 4, 8, or full page
- **CAS Latency (CL):** 2, 3
### **Descriptions:**
- Designed for low-power mobile applications.
- Fully synchronous operation with a single clock (CK) input.
- Supports programmable burst lengths and sequential/interleave burst modes.
- Auto Refresh (CBR) and Self Refresh modes available.
- On-chip temperature-compensated self-refresh (TCSR) for power efficiency.
### **Features:**
- **Low Power Consumption:**
- Active current: 40mA (typical)
- Standby current: 10µA (typical)
- Self-refresh current: 100µA (typical)
- **Partial Array Self-Refresh (PASR):** Reduces power by refreshing only necessary banks.
- **Deep Power-Down Mode:** Ultra-low standby current.
- **Programmable Output Driver Strength:** Adjustable for signal integrity.
- **On-Die Termination (ODT):** Improves signal quality in high-speed applications.
- **RoHS Compliant:** Lead-free and halogen-free.
This SDRAM is commonly used in smartphones, tablets, and other portable devices requiring low-power memory solutions.
