32Mx8, 16Mx16 256Mb DDR Synchronous DRAM The IS43R83200B-6TL is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip manufactured by ISSI (Integrated Silicon Solution Inc.). Below are the factual specifications, descriptions, and features of the part:
### **Specifications:**
- **Memory Type:** DDR3 SDRAM
- **Density:** 2Gb (256M x 8)
- **Organization:** 256M words × 8 bits
- **Voltage:** 1.5V ± 0.075V
- **Speed Grade:** -6TL (DDR3-1066, CL=7)
- **Package:** 96-ball FBGA (Fine-pitch Ball Grid Array)
- **Operating Temperature:** Commercial (0°C to +85°C) or Industrial (-40°C to +85°C) depending on variant
- **Refresh Rate:** 64ms (8192 cycles)
- **Burst Length:** 8 (BL8) or 4 (BC4) with on-the-fly selection
- **CAS Latency (CL):** 5, 6, 7, 8, 9, 10 (programmable)
- **Data Rate:** 1066 Mbps (PC3-8500)
- **Interface:** SSTL_15 (1.5V)
### **Descriptions:**
- The IS43R83200B-6TL is a high-speed, low-power DDR3 SDRAM designed for applications requiring high bandwidth and low latency.
- It supports auto-refresh and self-refresh modes for power efficiency.
- The chip includes programmable features such as CAS latency, additive latency, and burst length.
- It is RoHS compliant.
### **Features:**
- **JEDEC Standard Compliant:** Fully compliant with DDR3 specifications (JESD79-3).
- **Bank Architecture:** 8 internal banks for concurrent operation.
- **On-Die Termination (ODT):** Supports ODT for improved signal integrity.
- **Write Leveling:** Adjusts DQS and DQ timing for better system performance.
- **Precharge & Active Power Down Modes:** Reduces power consumption.
- **ZQ Calibration:** Supports external resistor calibration for output drive and ODT.
- **Partial Array Self-Refresh (PASR):** Optional feature to reduce power in self-refresh mode.
This information is based on ISSI's official datasheet for the IS43R83200B-6TL.
