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IS45S32400E-7TLA2 from ISSI

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15.625ms

IS45S32400E-7TLA2

Manufacturer: ISSI

4M x 32 128Mb SYNCHRONOUS DRAM

Partnumber Manufacturer Quantity Availability
IS45S32400E-7TLA2,IS45S32400E7TLA2 ISSI 2148 In Stock

Description and Introduction

4M x 32 128Mb SYNCHRONOUS DRAM The IS45S32400E-7TLA2 is a 512Mb (32Mx16) Synchronous DRAM (SDRAM) manufactured by ISSI (Integrated Silicon Solution, Inc.). Below are the key specifications, descriptions, and features:

### **Specifications:**
- **Density:** 512Mb (32M words × 16 bits)  
- **Organization:** 4 banks × 8,192 rows × 1,024 columns × 16 bits  
- **Voltage Supply:** 3.3V (±0.3V)  
- **Speed Grade:** -7 (143MHz clock frequency)  
- **Access Time:** 7ns (tAC)  
- **CAS Latency (CL):** 2, 3 programmable  
- **Burst Length:** 1, 2, 4, 8, full page  
- **Refresh Cycles:** 8,192 refresh cycles / 64ms  
- **Operating Temperature Range:** Commercial (0°C to +70°C)  
- **Package:** 54-pin TSOP-II (Type II)  

### **Descriptions:**
- **Type:** Synchronous DRAM (SDRAM)  
- **Interface:** Fully synchronous with a single 3.3V power supply  
- **Refresh Mode:** Auto-refresh and self-refresh supported  
- **Command Set:** Standard SDRAM commands (ACTIVE, READ, WRITE, PRECHARGE, etc.)  

### **Features:**
- **High-Speed Operation:** Up to 143MHz clock frequency  
- **Programmable Burst Length:** Supports 1, 2, 4, 8, or full-page bursts  
- **Auto Precharge:** Configurable for each burst access  
- **Low Power Consumption:** Standby and power-down modes available  
- **Burst Read/Write:** Supports sequential or interleaved burst modes  
- **Single 3.3V Power Supply:** Compatible with standard SDRAM interfaces  

This SDRAM is commonly used in networking, telecommunications, and embedded systems requiring high-speed memory access.

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