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IS61LV12816-10BI from ISSI

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15.625ms

IS61LV12816-10BI

Manufacturer: ISSI

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

Partnumber Manufacturer Quantity Availability
IS61LV12816-10BI,IS61LV1281610BI ISSI 24 In Stock

Description and Introduction

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY The IS61LV12816-10BI is a high-speed 2M x 16-bit (32Mb) CMOS Static RAM (SRAM) manufactured by ISSI (Integrated Silicon Solution, Inc.). Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Organization:** 2M x 16-bit (32Mb)  
- **Voltage Supply:** 3.3V (±10%)  
- **Access Time:** 10ns  
- **Operating Current:** 80mA (typical)  
- **Standby Current:** 10mA (typical, CMOS level)  
- **Package:** 44-pin TSOP II (Type II)  
- **Operating Temperature Range:** Industrial (-40°C to +85°C)  
- **Pin Count:** 44  
- **I/O Type:** 3.3V CMOS  

### **Descriptions:**
- The IS61LV12816-10BI is a high-performance asynchronous SRAM designed for applications requiring fast access times and low power consumption.  
- It is commonly used in networking, telecommunications, and embedded systems where high-speed data storage is critical.  
- The device supports unlimited read and write cycles with no refresh requirements.  

### **Features:**
- **High-Speed Operation:** 10ns access time.  
- **Low Power Consumption:**  
  - Active current: 80mA (typical)  
  - Standby current: 10mA (CMOS level)  
- **Wide Voltage Range:** 3.3V ±10%.  
- **Industrial Temperature Range:** -40°C to +85°C.  
- **Fully Static Operation:** No clock or refresh needed.  
- **Three-State Outputs:** Supports bus sharing.  
- **Byte Control:** Supports upper byte (UB#) and lower byte (LB#) write operations.  
- **TTL-Compatible Inputs and Outputs.**  
- **Lead-Free and RoHS Compliant.**  

This SRAM is ideal for applications requiring fast, non-volatile memory with low power consumption.

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