128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY The IS61LV12816-15LQI is a high-speed CMOS static RAM (SRAM) manufactured by Integrated Silicon Solution Inc. (ISSI). Below are its key specifications, descriptions, and features:
### **Specifications:**
- **Density:** 2 Mbit (128K x 16-bit)
- **Voltage Supply:** 3.3V (±10%)
- **Access Time:** 15 ns
- **Operating Current:** 70 mA (typical)
- **Standby Current:** 5 mA (typical, CMOS level)
- **Package:** 44-pin Thin Quad Flat Pack (TQFP)
- **Operating Temperature Range:** -40°C to +85°C (Industrial grade)
- **Organization:** 131,072 words × 16 bits
- **I/O Type:** Common I/O (separate input/output control)
### **Descriptions:**
- The IS61LV12816-15LQI is a low-power, high-performance SRAM designed for applications requiring fast data access.
- It features a fully static memory core, eliminating the need for external refresh or clock signals.
- The device supports asynchronous operation with separate control signals for read and write operations.
- It is commonly used in networking, telecommunications, and embedded systems.
### **Features:**
- **High-Speed Performance:** 15 ns access time.
- **Low Power Consumption:** CMOS standby mode reduces power usage.
- **Wide Operating Voltage:** 3.3V with tolerance for fluctuations.
- **Industrial Temperature Range:** Suitable for harsh environments.
- **Three-State Outputs:** Allows bus sharing in multi-memory systems.
- **Byte Control:** Supports upper and lower byte write operations (UB/LB pins).
- **TTL-Compatible Inputs and Outputs:** Ensures easy interfacing with standard logic devices.
- **Lead-Free & RoHS Compliant:** Environmentally friendly manufacturing.
This information is based strictly on the manufacturer's datasheet and technical documentation.
