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IS61LV25616-8T from ISSI

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IS61LV25616-8T

Manufacturer: ISSI

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

Partnumber Manufacturer Quantity Availability
IS61LV25616-8T,IS61LV256168T ISSI 6000 In Stock

Description and Introduction

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY The IS61LV25616-8T is a high-speed 256K x 16 (4M-bit) Static RAM (SRAM) manufactured by ISSI (Integrated Silicon Solution, Inc.). Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Organization:** 256K x 16 (4,194,304 bits)
- **Operating Voltage:** 3.3V (±10%)
- **Access Time:** 8 ns (max)
- **Operating Current:** 70 mA (typical)
- **Standby Current:** 5 mA (typical)
- **Package:** 44-pin TSOP Type II
- **Temperature Range:** Commercial (0°C to +70°C) and Industrial (-40°C to +85°C) options
- **I/O Interface:** CMOS-compatible
- **Data Retention:** >20 years

### **Descriptions:**
- The IS61LV25616-8T is a low-power, high-performance asynchronous SRAM.
- It is designed for applications requiring fast access times and low power consumption.
- The device supports unlimited read and write cycles with no refresh requirements.
- It is commonly used in networking, telecommunications, and embedded systems.

### **Features:**
- **High-Speed Performance:** 8 ns access time.
- **Low Power Consumption:** Optimized for battery-operated and portable devices.
- **Asynchronous Operation:** No clock required for read/write operations.
- **Tri-State Outputs:** Allows bus sharing in multi-master systems.
- **Byte Control:** Supports individual byte write operations (UB#, LB# pins).
- **Fully Static Operation:** No refresh or clock needed.
- **TTL-Compatible Inputs and Outputs:** Ensures easy interfacing with other logic families.

This SRAM is ideal for applications requiring fast, non-volatile memory with low power consumption.

Application Scenarios & Design Considerations

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Partnumber Manufacturer Quantity Availability
IS61LV25616-8T,IS61LV256168T ISSI,ISSI一 6936 In Stock

Description and Introduction

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY The IS61LV25616-8T is a high-speed 256K x 16-bit (4Mb) static RAM (SRAM) manufactured by ISSI (Integrated Silicon Solution, Inc.).  

### **Specifications:**  
- **Organization:** 256K x 16-bit  
- **Density:** 4 Megabits (4Mb)  
- **Supply Voltage:** 3.3V  
- **Access Time:** 8 ns  
- **Operating Current:** 70 mA (typical)  
- **Standby Current:** 3 mA (typical)  
- **Package:** 44-pin TSOP II  
- **Operating Temperature Range:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Interface:** Asynchronous SRAM  
- **Data Retention:** >10 years  

### **Descriptions and Features:**  
- High-speed CMOS SRAM with a fast access time of 8 ns.  
- Low power consumption in both active and standby modes.  
- Fully static operation—no clock or refresh required.  
- TTL-compatible inputs and outputs.  
- Three-state outputs for bus compatibility.  
- Industrial temperature range option available.  
- Suitable for applications requiring high-speed, low-power memory, such as networking, telecommunications, and embedded systems.  

This SRAM is commonly used in systems where fast data access and low power consumption are critical.

Application Scenarios & Design Considerations

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Partnumber Manufacturer Quantity Availability
IS61LV25616-8T,IS61LV256168T ICSI 6936 In Stock

Description and Introduction

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY The IS61LV25616-8T is a high-speed 256K x 16-bit (4M-bit) Static RAM (SRAM) manufactured by ICSI (Integrated Circuit Solution Inc.).  

### **Specifications:**  
- **Organization:** 256K x 16-bit (4M-bit)  
- **Voltage Supply:** 3.3V  
- **Access Time:** 8ns  
- **Operating Current:** 70mA (typical)  
- **Standby Current:** 5mA (typical)  
- **Package:** 44-pin TSOP-II  
- **Operating Temperature Range:** Commercial (0°C to +70°C)  
- **I/O Type:** CMOS-compatible  

### **Descriptions & Features:**  
- **High-Speed Performance:** Fast access time of 8ns for high-speed applications.  
- **Low Power Consumption:** Optimized for battery-operated and power-sensitive devices.  
- **Wide Voltage Range:** Operates at 3.3V ±10%.  
- **Three-State Outputs:** Supports bus sharing in multi-master systems.  
- **Automatic Power-Down:** Reduces power consumption when deselected.  
- **Fully Static Operation:** No refresh or clock required.  
- **Byte Control:** Supports independent byte access (UB, LB control signals).  
- **TTL-Compatible Inputs and Outputs:** Ensures easy interfacing with other logic families.  

This SRAM is commonly used in networking, telecommunications, and embedded systems requiring fast, low-power memory solutions.

Application Scenarios & Design Considerations

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

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