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IS61LV6416-10BI from ISSI,ISSI一

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IS61LV6416-10BI

Manufacturer: ISSI,ISSI一

64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY

Partnumber Manufacturer Quantity Availability
IS61LV6416-10BI,IS61LV641610BI ISSI,ISSI一 1500 In Stock

Description and Introduction

64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY The IS61LV6416-10BI is a high-speed 64K x 16-bit Static RAM (SRAM) manufactured by ISSI (Integrated Silicon Solution, Inc.).  

### **Key Specifications:**  
- **Organization:** 64K x 16-bit  
- **Speed:** 10 ns (access time)  
- **Voltage Supply:** 3.3V (operating range: 3.0V to 3.6V)  
- **Package:** 48-ball BGA (Ball Grid Array)  
- **Operating Temperature Range:**  
  - Commercial (0°C to +70°C)  
  - Industrial (-40°C to +85°C)  
- **Low Power Consumption:**  
  - Active current: 80 mA (typical)  
  - Standby current: 5 mA (typical)  

### **Features:**  
- **High-Speed Performance:** 10 ns access time  
- **CMOS Technology:** Low power consumption  
- **Fully Static Operation:** No refresh required  
- **Three-State Outputs:** Directly TTL-compatible  
- **Single 3.3V Power Supply:**  
- **Byte Control (UB, LB):** Allows individual byte access  
- **Automotive Grade Options Available**  

This SRAM is commonly used in applications requiring fast data access, such as networking, telecommunications, and embedded systems.

Partnumber Manufacturer Quantity Availability
IS61LV6416-10BI,IS61LV641610BI ISSI 1500 In Stock

Description and Introduction

64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY The IS61LV6416-10BI is a high-speed 64K x 16-bit Static RAM (SRAM) manufactured by Integrated Silicon Solution, Inc. (ISSI).  

### **Key Specifications:**  
- **Density:** 1 Megabit (64K x 16)  
- **Organization:** 65,536 words × 16 bits  
- **Supply Voltage:** 3.3V (±10%)  
- **Access Time:** 10 ns  
- **Operating Current:** 70 mA (typical)  
- **Standby Current:** 5 mA (typical)  
- **Package:** 48-ball BGA (Ball Grid Array)  
- **Operating Temperature Range:** -40°C to +85°C (Industrial)  
- **I/O Type:** CMOS-compatible  

### **Features:**  
- **High-Speed Performance:** 10 ns access time  
- **Low Power Consumption:**  
  - Active current: 70 mA (typical)  
  - Standby current: 5 mA (typical)  
- **Single 3.3V Power Supply**  
- **Fully Static Operation:** No refresh required  
- **Three-State Outputs:** TTL-compatible  
- **Byte Control:** Upper and lower byte select (UB#, LB#)  
- **Industrial Temperature Range (-40°C to +85°C)**  
- **Lead-Free & RoHS Compliant**  

This SRAM is commonly used in applications requiring fast, low-power memory, such as networking, telecommunications, and embedded systems.

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