256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM The IS61NLP102418-200TQ is a memory product manufactured by ISSI (Integrated Silicon Solution, Inc.). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Manufacturer:**
- **ISSI (Integrated Silicon Solution, Inc.)**
### **Specifications:**
- **Type:** Low Power SRAM (Static Random-Access Memory)
- **Density:** 1M x 18 (18 Megabit)
- **Organization:** 1,048,576 words × 18 bits
- **Speed:** 200 MHz (5 ns access time)
- **Voltage Supply:** 1.8V (Low Voltage Operation)
- **Package:** 48-ball TQFP (Thin Quad Flat Package)
- **Operating Temperature Range:** Industrial (-40°C to +85°C)
- **Interface:** Parallel
### **Descriptions:**
- The IS61NLP102418-200TQ is a high-performance, low-power SRAM designed for applications requiring fast access times and reduced power consumption.
- It features a synchronous burst mode for high-speed data transfer.
- The device is suitable for industrial, networking, and embedded systems where power efficiency and reliability are critical.
### **Features:**
- **Low Power Consumption:** Optimized for battery-operated and power-sensitive applications.
- **High-Speed Operation:** 200 MHz clock frequency with 5 ns access time.
- **Synchronous Operation:** Supports burst mode for sequential data access.
- **1.8V Core Voltage:** Reduces power dissipation.
- **Industrial Temperature Range:** Operates reliably in harsh environments.
- **48-ball TQFP Package:** Compact form factor for space-constrained designs.
- **Byte Control:** Individual byte write control (Upper and Lower Byte enables).
This information is based solely on the manufacturer's datasheet and technical documentation.
