256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM The IS61NLP25672-200B1I is a high-speed synchronous pipelined SRAM manufactured by ISSI (Integrated Silicon Solution, Inc.). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Density:** 36Mb (1M x 36)
- **Organization:** 1,048,576 words × 36 bits
- **Supply Voltage:** 3.3V (±10%)
- **Speed:** 200 MHz (5 ns access time)
- **Operating Temperature Range:** Industrial (-40°C to +85°C)
- **Package:** 165-ball BGA (Ball Grid Array)
- **Interface:** Synchronous pipeline burst
- **I/O Type:** Common I/O (CIO)
- **Burst Lengths:** Supports 2, 4, 8, and full-page burst modes
- **Cycle Time:** 5 ns (200 MHz operation)
- **Refresh:** Not required (Static RAM)
- **Data Retention:** Guaranteed at VDD ≥ 1.5V
### **Descriptions:**
- The IS61NLP25672-200B1I is a high-performance synchronous SRAM designed for applications requiring fast data access and low latency.
- It features a pipelined architecture for high-speed operation with minimal wait states.
- The device supports burst mode operations, enhancing data throughput efficiency.
- It is commonly used in networking, telecommunications, and high-performance computing applications.
### **Features:**
- **High-Speed Operation:** 200 MHz clock frequency with 5 ns access time.
- **Synchronous Pipeline Burst:** Enables efficient data transfer with minimal latency.
- **Low Power Consumption:** Optimized for power-sensitive applications.
- **Common I/O (CIO):** Simplifies system design by using shared input/output pins.
- **Industrial Temperature Range:** Suitable for harsh environments (-40°C to +85°C).
- **Burst Mode Support:** Configurable burst lengths (2, 4, 8, full-page).
- **No Refresh Required:** Unlike DRAM, SRAM retains data without periodic refresh cycles.
- **3.3V Operation:** Compatible with standard LVCMOS/LVTTL interfaces.
This information is based solely on the manufacturer's datasheet and technical documentation.
